PART |
Description |
Maker |
M68AF511A M68AF511AL55MC1T M68AF511AL55MC6T M68AF5 |
4 Mbit (512K x8) / 5V Asynchronous SRAM 4 Mbit (512K x8), 5V Asynchronous SRAM(512K X 8 SRAM 5V SOP32 ,I-Temp) 4 Mbit (512K x8), 5V Asynchronous SRAM 4兆位(为512k × 8),5V的异步SRAM
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导 STMicroelectronics N.V.
|
CY7C1386DV25-250BZXI CY7C1386DV25-250BZI CY7C1386D |
18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3.4 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 18兆位(为512k × 36/1M × 18)流水线双氰胺同步静态存储器 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 2.6 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3.4 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
A28F400BX-B |
4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引导块闪速存储器)
|
Intel Corp.
|
CY62157EV18LL-55BVXI |
8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 55 ns, PBGA48
|
Cypress Semiconductor, Corp.
|
CY7C1380D |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM(18-Mb (512K x 36/1M x 18)管道式SRAM) 18兆位(为512k × 36/1M × 18)流水线的SRAM18 - MB的(12k × 36/1M × 18)管道式的SRAM
|
Cypress Semiconductor Corp.
|
CY7C1387D-250AXC CY7C1386D-167BGC CY7C1386D-167BGX |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1460AV25 CY7C1462AV25 |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM)
|
Cypress Semiconductor Corp.
|
CY7C1386D-250AXC ICY7C1387D-167BGI ICY7C1387D-167B |
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
|
Cypress Semiconductor
|
CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR-II SRAM 4-Word Burst Architecture 36-Mbit QDR-II SRAM 2-Word Burst Architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Flow-through SRAM with NoBL Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture SPI Serial EEPROM SPI串行EEPROM 36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM 256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc. Electronic Theatre Controls, Inc.
|
CY62148DV30 CY62148DV30LL-55BVI CY62148DV30L-55ZSX |
4-Mbit (512K x 8) MoBL垄莽 Static RAM 4-Mbit (512K x 8) MoBL? Static RAM
|
Cypress Semiconductor
|
IS41C85120-60K IS41C85120-60KI IS41C85120-35K IS41 |
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 512K X 8 EDO DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc]
|
CY62148DV30LL-55ZSXI CY62148DV30LL-55SXI CY62148DV |
4-Mbit (512K x 8) MoBLStatic RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32 4-Mbit (512K x 8) MoBLStatic RAM 512K X 8 STANDARD SRAM, 70 ns, PDSO32
|
Cypress Semiconductor, Corp.
|